Innovative silicon compatible materials for light emitting devices

The paper reports the potentialities of innovative silicon compatible materials for light emitting devices. In particular thin films of Er doped yttrium oxide have been synthesized by a technique totally compatible with ULSI processes. Through the structural characterization, we will verify the high stability of the film and the good dopant dissolution. Moreover, by the investigation of the optical properties, we will demonstrate that the use of this compound is effective to introduce more than 10 21 Er/cm 3 in optically active state, value that cannot be reached in other Si compatible materials. The influence of Er content on the optical properties will be described in details. Moreover, we will propose the introduction of a proper sensitizer for Er, bismuth, in the same thin film. In particular, we will show that the (Er+Bi) co-doped yttrium oxide is a perfect host to overcome another important drawback of Er doped materials that is its low absorption cross section. The influence of