Simulation study of influence of Al, Si and B on the growth of TiC

The influence of Al, Si and B on the growth of TiC is studied in this article. It is found that the adsorption of Al is more favorable on TiC {111} than that on {001}. Therefore, under the influence of it, the growth rate of {111} will be accelerated and result in the decreasing of the relative growth rate between {001} and {111}. Therefore, TiC will grow into truncated-octahedron. But when TiC is formed under the influence of Si and B, they will grow into hexagonal platelets due to the preferential adsorption of Si and B on {011} and {001}.