Deposition Of PZT Thin Films With (001), (110), and (111) Crystallographic Orientations And Their transverse Piezoelectric Characteristics

Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31 * of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31 * have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied.