Photoelectrochemical Cell Performance Of Chemically Deposited MoBi2Te5 Thin Films

Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arrested Precipitation Technique (APT) which is based on self organized growth process. As deposited MoBi2Te5 thin films were dried in constant temperature oven at 110 o C and further characterized for their optical, structural, morphological, compositional and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (Eg) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi2Te5 thin films were nanocrystalline having rhombohedral structure. The energy dispersive spectroscopic analysis of as deposited thin films showed close agreements in theoretical and experimental atomic percentages of Mo 4+ , Bi 3+ and Te 2- and suggest that the chemical formula MoBi2Te5 assigned to molybdenum bismuth telluride thin film material is confirm. The resistivity and thermoelectric power measurement studies showed that the films