In Situ Formation Of Tantalum Oxide – PMMA Hybrid Dielectric Thin Films For Transparent Electronic Application

Solution-processed high-k dielectric hybrid thin films prepared at temperatures below 200 o C represent a subject of increasing scientific interest satisfying current requirements for printable thin film transistors used in transparent flexible electronics. In this work, we propose a new approach for the synthesis of new tantalum oxide-PMMA hybrid dielectric thin films at 160 o C by modified sol-gel method, using as precursors tantalum ethoxide cluster (Ta(OC2H5)5) and methyl methacrylate monomer (MMA). So far it has not been reported in situ formation of tantalum oxide nanocrystals in hybrid dielectric materials at this low temperature. Hybrid sols with 1:1 and 4:1 (Ta(OC2H5)5):MMA molar ratios were used for spin-coating of thin films. The thermal behavior of these sols was observed in order to optimize the post-deposition treatment of the films. The hybrid films were investigated by scanning electron microscopy (SEM) for thickness and morphology, by grazing incidence x-ray diffractio