Effect of Mg content in Ag/Zn1-XMgXO/Cu structure for bipolar resistive switching performances

In this study, the bipolar resistive switching behavior of Pulsed Laser Deposited Zn1-xMgxO (x= 0, 0.1) thin films in Ag/Zn1-XMgxO/Cu structure has been investigated. The XRD pattern of Zn1-XMgxO exhibits the presence of (002) and (103) reflection. The cross-sectional field emission scanning electron microscopy (FE-SEM) studies were further carried out to examine the thickness of the film. In order to analyze the bipolar resistive switching behavior of the Zn1-xMgxO thin films, an I-V measurement was performed at room temperature. The memory cell Ag/Zn0.9Mg0.1O/Cu exhibits set voltage (ON state) at 2.57V and reset voltage (OFF state) at -3.15 V, excellent OFF to ON resistance ratio (~10 5 ) for 200 DC sweep cycles and exhibits good retention (>10 3 s). The physical mechanism responsible for exhibiting switching behavior in the Zn1-xMgxO thin films was explained by formation and rupture of the nano-scale conduction filament due to Oxygen vacancies. Ohmic conduction and Poole-Frenkel emi