Effect of residual stress in Pb (Zr0.52Ti0.48) O3 – BiFeO3 multilayer cantilever structure

This paper discussed about the integration issues of Pb (Zr0.52Ti0.48) O3 – BiFeO3 (PZT - BFO) multilayer thin film deposited on silicon substrate for possible application in future micro-electro-mechanical system (MEMS) devices. The PZT - BFO multilayer thin film is deposited on silicon wafer by sol-gel technique. The multilayer film is annealed at 650 °C in air for 60 min. The deposited multilayer film is found to be polycrystalline in nature. The PZT-BFO multilayer exhibited room temperature multiferroic properties (remnant polarization of 37 mC/ cm 2 and remnant magnetization of 3.1 emu / cm 3 ). To fabricate the PZT - BFO multiferroic cantilever structures, a two-mask process flow is developed. Etch rates of the PZT - BFO multilayer (180 nm/ min), ZrO2 buffer layer (35 nm/ min) and SiO2 layer (350 nm/ min) are optimized in CHF3 plasma. The multiferroic cantilever structures are released by isotropic etching of silicon using SF6 plasma. Bending and cracks are observed in the releas