Inverted Ternary Bulk Hetrojunction Hybrid Photovoltaic Device Based On AgInSe2 –polymer Blend As Absorber And PEDOT: PSS As Hole Transport Layer

For the first time Inverted ternary bulk hetrojunction hybrid photovoltaic device based on AgInSe2 – polymer blend as absorber and PEDOT:PSS as hole transport layer was fabricated and characterized. Blends of MDMOPVV.PCBM.AIS (MDMOPVV-Poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene], PCBM-(Phenyl-C61-butyric acid methyl ester), AIS-AgInSe2) used as absorber layer. Bulk hetrojuction hybrid Photovoltaic device Ag/PEDOT:PSS /MDPVV.PCBM.AIS/ZnO/ITO was fabricated and tested with standard solar simulator and device characterization system as inverted cell configuration. The best performance and photovoltaic parameters, were obtained using an open-circuit voltage of about Voc 0.24 V, a photocurrent of Jsc 0.56 JSC (mA/cm 2 ), 28.4 (%) FF and an efficiency of 0.038 percent with a white light illumination intensity of 100 mW/cm 2 . Further improvement efforts for better performance are on the way. Successful fabrication and working of this inverted device suggest further optimi